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HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
Integrated Device Technology, Inc.
IDT7014S
FEATURES:
* True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access -- Military: 20/25/35ns (max.) -- Commercial: 12/15/20/25ns (max.) * Low-power operation -- IDT7014S Active: 900mW (typ.) * Fully asynchronous operation from either port * TTL-compatible; single 5V (10%) power supply * Available in 52-pin PLCC and a 64-pin TQFP * Industrial temperature range (-40C to +85C) is available, tested to military electrical specifications
DESCRIPTION:
The IDT7014 is an extremely high-speed 4K x 9 Dual-Port Static RAM designed to be used in systems where on-chip hardware port arbitration is not needed. This part lends itself to high-speed applications which do not need on-chip arbitration to manage simultaneous access. The IDT7014 provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. See functional description. The IDT7014 utilitizes a 9-bit wide data path to allow for parity at the user's option. This feature is especially useful in data communication applications where it is necessary to use a parity bit for transmission/reception error checking. Fabricated using IDT's high-performance technology, the IDT7014 Dual-Ports typically operate on only 900mW of power at maximum access times as fast as 12ns. The IDT7014 is packaged in a 52-pin PLCC and a 64-pin thin plastic quad flatpack (TQFP).
FUNCTIONAL BLOCK DIAGRAM
R/WL
R/WR
OEL
I/O0L- I/O8L COLUMN CONTROL COLUMN CONTROL
OER
I/O0R- I/O8R
A0L- A11L
LEFT SIDE ADDRESS DECODE LOGIC
MEMORY ARRAY
RIGHT SIDE ADDRESS DECODE LOGIC
A0R- A11R
2528 drw 01
The IDT logo is a registereed trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
(c)1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
OCTOBER 1996
DSC-2528/6
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS(1,2)
INDEX
ABSOLUTE MAXIMUM RATINGS (1)
Symbol Rating Commercial -0.5 to +7.0 Military -0.5 to +7.0 Unit V VTERM(2) Terminal Voltage with Respect to GND
A7R A8R A9R A10R A11R
A6L A7L A8L A9L A10L A11L
OEL
VCC R/WL GND I/O8L I/O7L I/O6L
765432 52 51 50 49 48 47 1 8 46 45 9 10 44 11 43 12 42 IDT 7014 13 41 J52-1 PLCC 14 40 15 39 Top View (3) 16 38 17 37 18 36 19 35 20 34 21 22 23 24 25 26 27 28 29 30 31 32 33
A5L A4L A3L A2L A1L A0L A0R A1R A2R A3R A4R A5R A6R
VTERM(3) TA TBIAS TSTG IOUT
Terminal Voltage Operating Temperature Temperature Under Bias Storage Temperature DC Output Current
-0.5 to Vcc 0 to +70 -55 to +125 -55 to +125 50
-0.5 to Vcc
V
-55 to +125 C -65 to +135 C
OER
GND R/WR GND I/O8R I/O7R I/O6R I/O5R
-65 to +150 C 50 mA
2528 drw 02
NOTES: 2528 tbl 01 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.5V.
A5L A4L A3L A2L A1L A0L N/C N/C N/C N/C A0R A1R A2R A3R A4R A5R
I/O5L VCC I/O4L I/O3L I/O2L I/O1L I/O0L I/O0R I/O1R I/O2R I/O3R VCC I/O4R
INDEX
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 A6R A7R A8R A9R A10R A11R
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
A6L A7L A8L A9L A10L A11L
OEL
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
N/C VCC N/C R/WL N/C GND I/O8L I/O7L I/O6L
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Grade Military Commercial
Ambient Temperature -55C to +125C 0C to +70C
GND 0V 0V
VCC 5.0V 10% 5.0V 10%
2528 tbl 02
IDT7014 PN64-1 TQFP Top View (3)
OER
N/C GND N/C R/WR N/C GND I/O8R I/O7R I/O6R
RECOMMENDED DC OPERATING CONDTIONS
Symbol VCC GND VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5(1) Typ. 5.0 0 -- -- Max. 5.5 0 6.0(2) 0.8 Unit V V V V
2528 tbl 03
NOTES: 1. All VCC pins must be connected to power supply. 2. All ground pins must be connected to ground supply. 3. This text does not indicate the orientation of the actual part-marking
I/O5L VCC I/O4L I/O3L I/O2L I/O1L I/O0L GND GND I/O0R I/O1R I/O2R I/O3R VCC I/O4R I/O5R
2528 drw 03
NOTES: 1. VIL > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.5V.
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V 10%)
IDT7014S Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Test Condition VCC = 5.5V, VIN = 0V to VCC VOUT = 0V to VCC IOL = 4mA IOH = -4mA Min. -- -- -- 2.4 Max. 10 10 0.4 -- Unit A A V V
2528 tbl 04
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5V 10%)
Test Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Condition Outputs Open f = fMAX(1) Version Mil. Com'l. IDT7014S12 Com'l. Only Typ. -- 160 Max. -- 250 IDT7014S15 Com'l. Only Typ. 160 160 Max. 260 250 IDT7014S20 Typ. 155 155 Max. 260 245 IDT7014S25 Typ. 150 150 Max. 255 240 IDT7014S35 Mil. Only Typ. 150 -- Max. 250 --
2528 tbl 05
Unit mA
NOTE: 1. At f = fmax, address inputs are cycling at the maximum read cycle of 1/tRC using the "AC Test Conditions" input levels of GND to 3V.
5V 5V 893
AC TEST CONDITIONS
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 3ns 1.5V 1.5V Figures 1, 2, and 3
2528 tbl 06
893 DATAOUT
DATAOUT
BUSY INT
347
30pF
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347
5pF
2528 drw 05
Figure 1. AC Output Test Load.
CAPACITANCE
Symbol CIN COUT
(1)
Figure 2. Output Test Load (for tHZ, tWZ, and tOW)
(TA = +25C, f = 1.0MHz) TQFP Package Only
Parameter Input Capacitance Output Capacitance Condition(2) VIN = 3dV VOUT = 3dV Max. Unit 9 10 pF pF
2528 tbl 07
Including scope and jig.
NOTES: 1. This parameter is determined by device characteristics but is not tested. 2. 3dv references the interperlated capacitance when the input and output signals swith from 0V to 3V or from 3V to 0V.
8 7 6 tAA (Typical, ns) 5 4 3 2 1 0 -1
- 10pF is the I/O capacitance of this device, and 3 pF is the AC Test Load Capacitance
20 40 60 80 100 120 140 160 180 200 Capacitance (pF)
2528 drw 06
Figure 3. Typical Output Derating (Lumped Capacitive Load).
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE
7014S12 Com'l. Only Symbol READ CYCLE tRC tAA tAOE tOH tLZ tHZ Read Cycle Time Address Access Time Output Enable Access Time Output Hold from Address Change Output Low-Z Time
(1, 2) (1, 2)
7014S15 Com'l. Only Min. 15 -- -- 3 3 -- Max. -- 15 8 -- -- 7
7014S20
7014S25
7014S35 Mil. Only
Parameter
Min. 12 -- -- 3 3 --
Max. -- 12 8 -- -- 7
Min. 20 -- -- 3 3 --
Max. -- 20 10 -- -- 9
Min. 25 -- -- 3 3 --
Max. -- 25 12 -- -- 11
Min. 35 -- -- 3 3 --
Max. -- 35 20 -- -- 15
Unit ns ns ns ns ns ns
2528 tbl 08
Output High-Z Time
NOTES: 1. Transition is measured 200mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is determined by device characterization, but is not production tested.
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1,2)
tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID tOH DATA VALID
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TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(1, 3)
tAOE
OE
tLZ DATAOUT VALID DATA tHZ
NOTES: 1. R/W = VIH for Read Cycles. 2. OE = VIL. 3. Addresses valid prior to OE transition LOW.
2528 drw 08
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE
7014S12 Symbol WRITE CYCLE tWC tAW tAS tWP tWR tDW tHZ tDH tWZ tOW tWDD tDDD Write Cycle Time Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Output High-Z Time Data Hold Time
(3) (1, 2) (1, 2)
7014S15 Com'l. Only Min. Max. 15 14 0 12 1 10 -- 0 -- 0 -- -- -- -- -- -- -- -- 7 -- 7 -- 30 25
7014S20 Min. 20 15 0 15 2 12 -- 0 -- 0 -- -- Max. -- -- -- -- -- -- 9 -- 9 -- 40 30
7014S25 Min. 25 20 0 20 2 15 -- 0 -- 0 -- -- Max. -- -- -- -- -- -- 11 -- 11 -- 45 35
7014S35 Mil. Only Min. Max. 35 30 0 30 2 25 -- 0 -- 0 -- -- -- -- -- -- -- -- 15 -- 15 -- 55 45 Unit ns ns ns ns ns ns ns ns ns ns ns ns
Parameter
Com'l. Only Min. Max. 12 10 0 10 1 8 -- 0 -- 0 --
(4)
-- -- -- -- -- -- 7 -- 7 -- 25 22
Write Enabled to Output in High-Z Output Active from End-of-Write Write Pulse to Data Delay
(4)
(1, 2, 3)
Write Data Valid to Read Data Delay
--
NOTES: 2528 tbl 09 1. Transition is measured 200mV from Low or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 4. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write With Port-to-Port Read".
TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ (1,2)
tWC ADDR"A" MATCH tWP R/W"A" tDW DATAIN "A" VALID tDH
ADDR"B"
MATCH tWDD
DATAOUT "B" tDDD
NOTES: 1. R/W"B" = VIH, Read cycle pass through. 2. All timing is the same for left and right ports. Port "A" may be either left or right port. Port "B" is opposite from port "A".
VALID
2528 drw 09
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE(1, 2, 3, 4, 5)
tWC ADDRESS
OE
tAW
tAS R/W tWZ DATAOUT
(3) (4)
tWP
(5)
tWR
tOW
tHZ
(3)
(4)
tDW DATAIN
tDH
2528 drw 10
NOTES: 1. R/W must be HIGH during all address transitions. 2. tWR is measured from R/W going HIGH to the end of write cycle. 3. During this period, the I/O pins are in the output state, and input signals must not be applied. 4. Transition is measured 200mV from the Low or High-impedance voltage with the Output Test Load (Figure 2). 5. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.
FUNCTIONAL DESCRIPTION
The IDT7014 provides two ports with separate control, address, and I/O pins that permit independent access for reads or writes to any location in memory. It lacks the chip enable feature of most Dual-Ports, thus it operates in active mode as soon as power is applied. Each port has its own Output Enable control (OE). In the read mode, the port's OE turns on the output drivers when set LOW. The user application should avoid simultaneous write operations to the same memory location. There is no on-chip arbitration circuitry to resolve write priority and partial data from both ports may be written. READ/WRITE conditions are illustrated in Table 1.
TABLE I - READ/WRITE CONTROL
Left or Right Port(1) R/W W L H X
OE
X L H
D0-8 DATAIN DATAOUT Z
Function Data written into memory Data in memory output on port High-impedance outputs
NOTE: 2528 tbl 10 1. AOL - A11L is not equal to AOR - A11R. 'H' = HIGH,'L' = LOW, 'X' = Don't Care, and 'Z' = High-impedance.
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IDT7014S HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT XXXX Device Type A Power 999 Speed A Package A Process/ Temperature Range
Blank
Commercial (0C to +70C)
PF J 12 15 20 25 35
64-pin TQFP (PN64-1) 52-pin PLCC (J52-1) Commercial Only Commercial Only Military Only
Speed in nanoseconds
S
Standard Power
7014
36K (4K x 9-Bit) Dual-Port RAM
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